The EP2000-DM-B laser diode module is a cost effective, highly coherent laser source. The patented discrete mode (DFB-like) ridge waveguide technology and epistructure design is used to deliver an InP-based strained quantum-well laser diode source emitting at a wavelength of 2.0µm with high SMSR. The Discrete Mode laser diode chip is packaged in an industry standard, hermetically sealed 14 pin butterfly package with integrated optical isolator, thermo-electric cooler (TEC), monitor photodiode and thermistor.
Key Features
Applications
Excellent reliability
High performance gas sensing
Mode-Hop free tuning >2nm
Seed Laser
Integrated optical isolator
Narrow linewidth <2MHz
Optical and electrical characteristics: (T = 25°C)
PARAMETER
SYMBOL
MIN
TYP
MAX
UNIT
LASER DIODE
Output Power in Fibre
Pf
1.5
1.75
2
mW
Centre Wavelength
λcen
1950
2001
2150
nm
Threshold Current
Ith
-
20
40
mA
Operating Current
Iop
70
120
Forward Voltage
Vf
1.3
1.6
V
Side Mode Suppression Ratio
SMSR
30
dB
Temperature Tuning Coefficient
0.1
nm/K
Current Tuning Coefficient
0.01
nm/mA
Quantum Efficiency
η
0.02
0.03
mW/mA
Optical Isolation
ISO
MONITOR DIODE*
Monitor Photo Current
Im
0.2
0.4
0.8
Monitor Operating Voltage
Vm
5.5
Monitor Dark Current (at 5V VDR)
Imd
< 0.2
µA
Absolute Maximum Ratings (Tsub= 25°C)
Parameter
Symbol
Ratings
Units
Laser diode reverse voltage
VR
Laser diode forward current
IF
Photodiode reverse voltage
VDR
Peltier current
IP
1.2
A
Operating case temperature
Tcase
-20 to 65
°C
Storage temperature
Tstg
-40 to 85
相关产品链接
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10.CCD相机和镜头
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